Nexperia launches 1200 V SiC Schottky diode, expanding wide bandgap product portfolio to empower high-power infrastructure
2025-07-14
Nexperia announced today the addition of two new 1200 V, 20A silicon carbide (SiC) Schottky diodes to its expanding portfolio of power electronic devices. PSC2120J and PSC2120L are designed to meet the demand for ultra-low power rectifiers in industrial applications, and can play a key role in high-efficiency energy conversion scenarios. This type of device is particularly suitable for applications in high-power artificial intelligence (AI) server infrastructure, telecommunications equipment power supplies, and solar inverters.
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