Mitsubishi Electric announced that it will begin providing a new integrated SBD * 1 SiC * 2-MOSFET * 3 module sample on May 31st. The half bridge module has a rated voltage of 3.3kV and an insulation withstand voltage of 6.0kVrms. It will help provide higher power density, higher efficiency, and reliability for railways, power systems, and large-scale industrial converter systems. The product is currently on display at PCIM Europe 2023 (May 9-11, Nuremberg, Germany).

Ampere Computing Announces New AmpereOne ™ The processor series has up to 192 single threaded Ampere cores, with the highest number of cores in the industry. This is the first product based on Ampere’s new self-developed core, newly created by Ampere’s own IP.

Ansemy has launched the latest generation of 1200 V EliteSiC silicon carbide (SiC) M3S devices, helping power electronics engineers achieve better energy efficiency and lower system costs. The new product series includes EliteSiC MOSFETs and modules that help improve switching speed, to adapt to an increasing number of energy infrastructure applications such as 800 V electric vehicle (EV) on-board chargers (OBCs) and electric vehicle DC fast charging, solar energy solutions, and energy storage.

Infineon Technology Co., Ltd. Continues to Launch EiceDRIVER ™ After the 6ED223xS12T series of 1200 V silicon on insulator (SOI) three-phase gate drivers, the EiceDRIVER 2ED132xS12x series is now being launched to further expand its product portfolio. The half bridge configuration of the IC series of this driver complements the existing 1200V SOI series, providing customers with more choices and design flexibility.