Industry news--Karmin Electronic (HK) Limited

Infineon launches its first OptiMOS ™ Trench Power MOSFET with 7 Technologies and 15 V PQFN Packaging
2023-12-13

The increasing demand for power in data centers and computing applications requires improving power efficiency and designing compact power supplies. Infineon Technologies Inc. (FSE code: IFX/OTCQX code: IFNNY) is following the development trend at the system level and launching the industry's first 15 V trench power MOSFET - the all-new OptiMOS ™ 7 series. OptiMOS ™ The 7 15 V series improves DC-DC conversion rates in servers, computing, data centers, and artificial intelligence applications.

This semiconductor product portfolio includes the latest PQFN 3.3 x 3.3 mm ² Source Down packaging, with standard gate and gate centered pin arrangements available in both bottom cooled and double-sided cooled versions for selection; In addition, the product portfolio also includes a stable and reliable ultra small PQFN 2 x 2 mm ² Packaging. OptiMOS ™ 7 15 V technology is specially designed for DC-DC conversion at low output voltages, especially suitable for servers and computing environments. This advanced technology aligns with the new trend of 48:1 DC-DC conversion in data center distribution.

Compared to the existing OptiMOS5 25 V, the all-new OptiMOS ™ By reducing the breakdown voltage, 7 15 V reduces RDS (on) and FOM Qg by about 30%, and reduces FOM QOSS by about 50%. PQFN 3.3 x 3.3 mm ² The bottom mounted packaging model of the source provides a more flexible and optimized PCB design. PQFN 2 x 2 mm ² The pulse current capability of the package exceeds 500 A, with a typical RthJC of 1.6 K/W. By minimizing conduction and switching losses to the greatest extent possible and adopting advanced packaging technology, simplified heat dissipation management has been achieved, setting a new benchmark for power density and overall efficiency.

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