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Toshiba introduces a 3300V SiC MOSFET module with high surge current capability, enhancing the reliability of industrial equipment
2026-09-28

Toshiba Electronic Components and Storage Devices Co., Ltd. ("Toshiba") announced today the launch of the dual SiC MOSFET module "IX800FXF2YMS4" for industrial equipment, further expanding its product line. This module is suitable for applications such as railway vehicles, renewable energy generation systems, and power conversion systems. The new module is equipped with Toshiba's third-generation silicon carbide (SiC) MOSFET chip, with a rated drain source voltage of 3300V and a rated drain current (DC) of 800A. The specifications indicate the I ² t limit value of the diode section, which is an indicator of surge current capability.

Manufacturers of industrial equipment such as railway traction inverters and converters, renewable energy generation systems, and industrial motor control equipment must continuously meet the demands for higher efficiency, smaller size, and higher reliability. In these systems, large surge currents may flow through the power semiconductor module under abnormal conditions, and the power semiconductor module may withstand huge surge currents. Therefore, it is necessary to have sufficient surge current tolerance to cope with this challenge.

The IX800FXF2YMS4 adopts an optimized SiC chip design, which can achieve an I ² t characteristic of 300kA ² s [1] under abnormal conditions. This characteristic is an indicator for measuring the surge current capability of the diode part.

The drain source conduction voltage (VDS (on) sense) of this module is 1.4V (typical value) [2], which helps to reduce conduction losses. The conduction switch loss (Eon) is 185mJ (typical value) [3], and the turn off switch loss (Eoff) is 175mJ (typical value) [3], which helps to reduce switch losses. These features help improve equipment reliability and efficiency, and reduce the size of the cooling system.

The new product adopts iXPLV ™ Encapsulation [4], with excellent installation compatibility. This product uses silver sintering bonding technology to improve the heat resistance and reliability of SiC chip bonding sites, achieving the 175 ° C channel temperature rating required for industrial equipment.

The addition of this new product has enabled Toshiba to adopt iXPLV ™ The number of packaged SiC MOSFET modules has increased to four, further expanding the range of available products.

Toshiba will continue to expand its SiC MOSFET module product lineup for industrial equipment, providing a wider range of product choices to meet diverse device specifications and application needs. At the same time, the company will continue to contribute to improving the reliability, efficiency, and miniaturization of industrial equipment.

Application:
industrial equipment
Railway traction inverters and converters
Renewable energy generation system
Power conversion system (solid-state transformer (SST) [5]; Uninterruptible Power Supply (UPS); Energy Storage System (ESS), etc
Industrial motor control equipment, etc

characteristic:
Specify the limit value of I ² t (diode) rated value: I ² t=300kA ² s
Low leakage source conduction voltage (detection): VDS (on) sense=1.4V (typical value)
Low switching loss: Eon=185mJ (typical value), Eoff=175mJ (typical value)
Rated junction temperature: Tch=175 ° C
Adopting iXPLV ™ Encapsulation.

Main specifications:
(Unless otherwise specified, Tc=25 ° C)

Product Model				IX800FXF2YMS4
encapsulation		Name		iXPLV™
encapsulation		Dimensions (mm)	typical value	144×99.5×40
Absolute maximum rated value	Leakage source voltage VDSS (V)			3300
	Gate source voltage VGSS (V)			＋25/－10
	Leakage current (DC) ID (A)			800
	Leakage current (pulse) IDP (A)			1600
	Junction temperature Tch (° C)			175
	Insulation voltage Visol (Vrms)	Communication, 60s		6000
	I2t limit value (diode) I2t (kA2s)	Tch (initial)=175 ° C, VGS=-6V, half sine wave 10ms 1 pulse, F.R.＝1%		300
Electrical Characteristics	Insulation voltage Visol (Vrms) VDS(on)sense（V）	ID＝800A，VGS＝＋20V，Tch＝25°C	typical value	1.4
	Leakage source conduction voltage (detection) VSD(on)sense（V）	IS＝800A，VGS＝＋20V，Tch＝25°C	typical value	1.4
	Leakage source conduction voltage (detection) VSD(off)sense（V）	IS＝800A，VGS＝－6V，Tch＝25°C	typical value	2.2
	Stray inductance LsPN (nH)	P terminal - N terminal	typical value	12
	Loss of conduction switch Eon（mJ）	VDD＝1800V，ID＝800A，VGS＝＋20V/－6V，Cgs＝100nF，RG(on)＝1.2Ω，RG(off)＝1.2Ω，Tch＝175°C，LS≃70nH	typical value	185
	Turn off switch loss Eoff（mJ）		typical value	175

Application Circuit Example

Example of Railway Traction System
Note: The application circuit examples shown in this document are for reference only. The design used for mass production must undergo thorough evaluation. Providing this application circuit example does not grant any industrial property license.

Note:
[1] Test conditions: Tch (initial)=175 ° C, VGS=-6V, half sine wave 10ms 1 pulse, F.R.＝1%
[2] Test conditions: ID=800A, VGS=+20V, Tch=25 ° C
[3] Test conditions: VDD=1800V, ID=800A, VGS=+20V/-6V, Cgs=100nF, RG (on)=1.2 Ω, RG (off)=1.2 Ω, Tch=175 ° C, LS ≃ 70nH
[4] iXPLV ™： Abbreviation for Intelligent Flexible Package Low Voltage
[5] SST: A next-generation transformer that utilizes power semiconductors to achieve miniaturization, high efficiency voltage conversion, and advanced power control.

For more information about the new product, please visit the following website:
IX800FXF2YMS4
https://toshiba-semicon-storage.com/cn/semiconductor/product/mosfets/sic-mosfet-modules/detail.IX800FXF2YMS4.htmlhttps://toshiba-semicon-storage.com/cn/semiconductor/product/mosfets/sic-mosfet-modules/detail.IX800FXF2YMS4.html

For more information about Toshiba SiC power devices, please visit the following website:
SiC power devices
https://toshiba-semicon-storage.com/cn/semiconductor/product/power-semiconductors.htmlhttps://toshiba-semicon-storage.com/cn/semiconductor/product/power-semiconductors.html

*iXPLV ™ It is a trademark of Toshiba Electronic Components and Storage Devices Co., Ltd.
*The company names, product names, and service names mentioned in this article may be trademarks of their respective companies.
*The product prices and specifications, service content, and contact information in this document are still the latest information as of the date of announcement, but any changes will not be notified separately.

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