STMicroelectronics’ 250W MasterGaN reference design accelerates the realization of compact and efficient industrial power supplies
2024-12-23
Robust GaN resonant power converter with synchronous rectification function improves energy efficiency by over 94%
In order to accelerate the design of gallium nitride (GaN) power supplies (PSUs) with excellent energy efficiency and power density, STMicroelectronics has launched the EVL250WMG1L resonant converter reference design based on MasterGaN1L system in package (SiP).
STMicroelectronics' MasterGaN SiP integrates GaN power transistors with gate drivers optimized for switching speed and control accuracy in a single package. Using highly integrated system level packaging (SiP) instead of equivalent solutions using multiple discrete components can help maximize the performance and reliability of the power supply, while accelerating design speed and saving PCB circuit board space.
The target application of the new power reference design is industrial grade power supplies that are limited in space and energy efficiency is crucial. This power supply integrates MasterGaN1L (with two built-in 650V 150m Ω GaN FET transistors) and STMicroelectronics' L6599A resonant controller, with a peak energy efficiency of over 94% and no need to install a heat sink on the primary side. The power supply also integrates STMicroelectronics' SRK2001A synchronous rectification controller, with a compact overall area of 80mm x 50mm and a power density of up to 34 watts per cubic inch (W/inch ³).
The maximum output current of this power supply is 10A. At 24V DC voltage, the output power is 250W, and the standby current is less than 1 µ A, with excellent energy-saving effect. The built-in protection functions of L6599A and SRK2001A can protect against the impact of overcurrent, short circuit, and overvoltage, while input voltage monitoring can ensure the normal startup of the power supply and provide undervoltage locking.
The EVL250WMG1L is now available on the market, integrating all functions and allowing for immediate evaluation of power functionality. The full text of the relevant document is published on www.st.com/evl250wmg11l, which can help system designers accelerate the development progress of GaN power projects.
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