Infineon Technologies Inc. (FSE code: IFX/OTCQX code: IFNNY) recently announced the launch of EiceDRIVE ™ 2EDL90xG3。 This is a 120V driver chip compatible with silicon (Si) and gallium nitride (GaN) devices. As AI data centers move towards higher power densities, power engineers will want to be able to flexibly evaluate and compare silicon and gallium nitride solutions without changing the PCB. This is particularly important for HV/MV IBC design. 2EDL90xG3 directly meets this requirement. Its unique built-in 5V gate clamp function further simplifies the design of GaN gate driver power supply, thereby achieving PCB sharing with Si devices.
Infineon EiceDriver ™ 2EDL90xG3 is a driver chip compatible with silicon and gallium nitride devices
2EDL90xG3 provides five configurable operating modes that can support multiple power topologies. The combination of its dual floating output architecture and 5V gate clamp can achieve a hybrid switched capacitor (HSC) topology suitable for both silicon and gallium nitride based designs. This device has a high driving strength of 4 A source current and 6 A sink current, providing extremely high flexibility for driving the secondary side of HV-IB. In addition, the internally integrated current sampling amplifier has a typical 5 MHz high bandwidth and high common mode voltage anti-interference capability of up to 35 V, effectively reducing the system bill of materials (BoM) and improving power density. This current sampling amplifier can provide high precision of 1% of the typical value at full scale, supporting precise control loop adjustment and fast overcurrent and short-circuit protection. The internally integrated bootstrap diode further reduces the circuit board space and system BoM in half bridge and full bridge applications. 2EDL90xG3 adopts a compact QFN 3 * 3 16 pin package.
This driver chip has been optimized for Infineon's extensive AI server power supply product portfolio. Infineon's products cover the complete power supply chain from grid to core, including solid-state transformers (SST) and solid-state circuit breakers (SSCB), power supplies (PSU) and battery backup units (BBU), intermediate bus converters (IBC), and second level DC conversion power modules (VRM). By combining the complementary advantages of silicon (Si), silicon carbide (SiC), and gallium nitride (GaN), Infineon provides customers with a clear and market validated end-to-end power architecture design path. This product portfolio also has ongoing design resource support, as well as scalable, high-quality components specifically tailored for the next generation AI server platform.
Supply situation
Samples of 2EDL900G3 and 2EDL901G3 are now available. For more details, please visit: www.infineon.com/part/2EDL900G3 and www.infineon.com/part/2EDL901G3.
Infineon will participate in PCIM Europe 2026
The PCIM Europe exhibition for power electronics systems and components will be held in Nuremberg, Germany from June 9th to 11th, 2026. Infineon will showcase its low-carbon and digital products and solutions at booth 470 in Hall 7. For media inquiries, please send an email to media.relations@infineon.com If industry analysts would like to attend the briefing, please send an email to MarketResearch.Relations@infineon.com To learn more about Infineon's highlights at the PCIM 2026 exhibition, please visit www.infineon.com/pcim.
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