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Kioxia Launches QLC UFS 4.1 Embedded Flash Devices for High-Capacity Mobile Storage
2026-02-02

8th generation BiCS FLASH ™ Technology achieves powerful performance and efficiency improvements

Kioxia Corporation, a leading global provider of memory solutions, announced today that the company has started sampling its new Universal Flash 1 (UFS) version 4.1 embedded memory devices using four layer cell (QLC) technology with 4 bits per cell. The new device is designed specifically for read intensive applications and high-capacity storage requirements, utilizing Kioxia's 8th generation BiCS FLASHTM 3D flash technology.

QLC UFS 4.1 Embedded Flash Memory Device

QLC UFS has a higher bit density compared to traditional TLC UFS, making it ideal for mobile applications that require large storage capacity. Thanks to advances in controller technology and error correction techniques, QLC technology is able to achieve this goal while maintaining competitive performance.

On the basis of these technological advancements, Kioxia's new devices have achieved significant performance improvements. Compared to the previous generation (UFS 4.0/BiCS FLASH) ™ Compared to QLC UFS, Kioxia's QLC UFS has increased sequential write speed by 25%, random read speed by 90%, and random write speed by 95%. The write amplification factor (WAF) has also been increased by up to 3.5 times (when WriteBooster is disabled).

Kioxia QLC UFS is not only perfect for smartphones and tablets, but also supports new products that require higher capacity and performance, including personal computers (PCs), networks, augmented reality/virtual reality (AR/VR), the Internet of Things (IoT), and devices that enable artificial intelligence (AI).

The new UFS 4.1 device offers two capacities of 512 GB and 1 TB, integrating Kioxia's advanced BiCS FLASH technology ™ The combination of 3D flash memory and integrated controller is included in the JEDEC standard package. Kioxia's 8th generation BiCS FLASH ™ 3D flash memory has launched CMOS direct bonding array (CBA) technology, marking a leap forward in the field of flash memory design with this architectural innovation.

The main features include:

Compliant with UFS 4.1 specifications. UFS 4.1 is backward compatible with UFS 4.0 and UFS 3.1.
8th generation Kioxia BiCS FLASH ™ 3D flash memory
Support WriteBooster, significantly improving write speed
Package size smaller than the previous generation QLC UFS: reduced from 11 × 13 mm to 9 × 13 mm

Related links:

Kioxia's UFS 4.1 product page

Note:

(1) Universal flash memory (UFS) is an embedded memory product category built according to the JEDEC UFS standard specifications. Due to the use of a serial interface, UFS supports full duplex, which enables concurrent read and write between the host processor and UFS devices
(2) Internal testing based on Kioxia
(3) 512GB product, when WriteBooster is enabled

-When it comes to a Kioxia product, product density refers to the internal memory chip density of the product, rather than the memory capacity available for data storage by end-users. Due to limitations such as overhead data area, formatting, bad sectors, and other factors, the available capacity for users will be lower than this value. To learn more details, please refer to the relevant product specifications. Definition: 1KB=2 ^ 10 bytes=1024 bytes; 1Gb=2 ^ 30 bits=1073741824 bits; 1GB=2 ^ 30 bytes=1073741824 bytes. 1Tb=2 ^ 40 bits=1099511627776 bits.

- 1 Gbps = 1, 000000000 bits per second. The read/write speed is the optimal value achieved by Kioxia in a specific testing environment, and Kioxia does not guarantee the read or write speed on specific device devices. The read and write speed may vary depending on the device used and the size of the file being read or written.

-The company name, product name, and service name may be trademarks of third-party companies.

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