Infineon launches 1200V low resistance coolsic MOSFET products
2022-06-08
CoolSiC ™ 1200V SiC MOSFET low ohm products (7m Ω, 14m Ω and 20m Ω) are packaged in to247-3/to247-4 and built on the most advanced trench gate semiconductor process. After optimization, the performance and reliability are further improved. Packaging is adopted XT interconnect technology, the latest coolsic ™ MOSFET has first-class heat dissipation performance.

CoolSiC ™ MOSFET is an ideal choice for hard switching and resonant switching topologies, such as power factor correction (PFC) circuit, bidirectional topology and DC-DC converter or DC-AC inverter.

Product features

● the maximum specification in the to247 package and the lowest RDS (on) 7m Ω

● . XT interconnect technology delivers best in class thermal performance

● maximum grid source voltage as low as -10v

● flexible off grid voltage selection -5v~0v

● avalanche capability

● short circuit capability


Application value

● high power density of single device

● the system output power of 7m Ω single device can reach 30 kW

● heat dissipation capacity increased by 15%

● wide off grid voltage selection, easy to design and apply

● enhanced robustness and reliability



Market advantages

● proven and enhanced package robustness with high reliability

● complete internal production front-end and back-end to ensure supply security

● the latest switch and gate driver technology for optimal performance

● easy to design and faster time to market



application area

● rapid charging of electric vehicles

● solar system

● energy storage system

● industrial drive