CoolSiC ™ 1200V SiC MOSFET low ohm products (7m Ω, 14m Ω and 20m Ω) are packaged in to247-3/to247-4 and built on the most advanced trench gate semiconductor process. After optimization, the performance and reliability are further improved. Packaging is adopted XT interconnect technology, the latest coolsic ™ MOSFET has first-class heat dissipation performance.
CoolSiC ™ MOSFET is an ideal choice for hard switching and resonant switching topologies, such as power factor correction (PFC) circuit, bidirectional topology and DC-DC converter or DC-AC inverter.
Product features
● the maximum specification in the to247 package and the lowest RDS (on) 7m Ω
● . XT interconnect technology delivers best in class thermal performance
● maximum grid source voltage as low as -10v
● flexible off grid voltage selection -5v~0v
● avalanche capability
● short circuit capability
Application value
● high power density of single device
● the system output power of 7m Ω single device can reach 30 kW
● heat dissipation capacity increased by 15%
● wide off grid voltage selection, easy to design and apply
● enhanced robustness and reliability
Market advantages
● proven and enhanced package robustness with high reliability
● complete internal production front-end and back-end to ensure supply security
● the latest switch and gate driver technology for optimal performance
● easy to design and faster time to market
application area
● rapid charging of electric vehicles
● solar system
● energy storage system
● industrial drive