Industry news--Karmin Electronic (HK) Limited

Nexperia launches 1200 V SiC Schottky diode, expanding wide bandgap product portfolio to empower high-power infrastructure
2025-07-14

Nexperia announced today the addition of two new 1200 V, 20A silicon carbide (SiC) Schottky diodes to its expanding portfolio of power electronic devices. PSC2120J and PSC2120L are designed to meet the demand for ultra-low power rectifiers in industrial applications, and can play a key role in high-efficiency energy conversion scenarios. This type of device is particularly suitable for applications in high-power artificial intelligence (AI) server infrastructure, telecommunications equipment power supplies, and solar inverters.

The new Schottky diode features temperature independent capacitive switching and zero recovery performance, providing advanced performance and excellent quality factor (QC x VF). In addition, its switching performance is almost unaffected by changes in current and switching speed. The combined PiN Schottky (MPS) structure used in these devices brings more advantages, such as excellent surge current tolerance through high peak forward current (IFSM). This feature reduces the need for additional protective circuits, significantly reduces system complexity, and enables engineers to achieve higher efficiency in high-voltage applications with smaller sizes.

The PSC2120J adopts a true dual pin D2PAK R2P (TO-263-2) surface mount (SMD) power plastic package, while the PSC2120L adopts a true dual pin TO247 R2P (TO-247-2) through-hole power plastic package. These thermally stable packages can enhance the reliability of devices in high-voltage applications at operating temperatures up to 175 ℃. As a mature manufacturer of high-quality semiconductor products, Nexperia has gained market trust through its strong supply chain support of various semiconductor technologies, which further provides protection for designers.

To learn more about Nexperia's SiC Schottky diode product portfolio.

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