Nexperia launches new 120 V/4A half bridge gate driver to further enhance robustness and efficiency in industrial and automotive applications
2024-11-21
Nexperia recently announced the launch of a series of high-performance gate driver ICs that can be used to drive high and low side N-channel MOSFETs in synchronous buck or half bridge configurations. These drivers include both automotive grade and industrial grade versions, with high current output and excellent dynamic performance, which can significantly improve application efficiency and robustness.
Among them, NGD4300-Q100 meets the automotive grade standards and is very suitable for electric power steering and power converter applications; The NGD4300 is designed for DC-DC converters in consumer devices, servers, and telecommunications equipment, as well as micro inverters in various industrial applications.
The high side drivers in these ICs can operate at DC bus voltages not exceeding 120 V, and the integrated diode bootstrap power supply helps to reduce PCB size and simplify overall system design. This series of devices can provide up to 4 A (peak) pull current and 5 A sink current, ensuring short rise and fall times even under heavy loads. Its delay characteristics are significantly better than similar competitors, with input and output delays as low as 13 nanoseconds and inter channel delay errors of only 1 nanosecond, which helps to further improve the switch duty cycle and shorten the dead time. These gate drivers have a rise time of 4 nanoseconds and a fall time of 3.5 nanoseconds (typical value), which can promote improved efficiency and support high-frequency and fast system control. In addition, it is also compatible with input control signals and can accept both TTL and CMOS logic levels.
Irene Deng, General Manager of Nexperia's IC Solutions Business Unit, stated:
These devices are the first batch of our newly launched high-performance half bridge gate driver product portfolio. This release highlights how Nexperia utilizes process innovation to meet the growing demand for robust gate drivers in the market. The new series of devices not only improves the efficiency of power converters for consumer, industrial, and automotive applications, but also enhances motor control stability.
These ICs adopt the silicon on insulator (SOI) process, which extends the negative voltage tolerance of the HS pin to -5V, significantly reducing the risk of chip damage caused by parasitic components and unexpected spikes in the system, thereby ensuring excellent robustness in power conversion and motor drive applications. NGD4300 and NGD4300-Q100 offer three packaging options: DFN-8, SO-8, and HSO-8, allowing engineers to flexibly choose between device size and thermal performance based on application requirements.
Click to learn more about Nexperia gate driver ICs.
Nexperia (Anshi Semiconductor)
Nexperia, headquartered in the Netherlands, is a global semiconductor company with a rich and long history of development in Europe. Currently, it has over 14000 employees in Europe, Asia, and the United States. As a leader in the development and production of basic semiconductor devices, Nexperia's devices are widely used in various application fields such as automotive, industrial, mobile, and consumer, providing support for the basic functions of almost all electronic designs in the world.
Nexperia provides services to global customers with an annual product shipment volume exceeding 100 billion units. These products have become industry benchmarks in terms of efficiency (such as process, size, power, and performance) and have gained widespread recognition. Nexperia has a rich IP product portfolio and continuously expanding product range, and has obtained certifications for IATF 16949, ISO 9001, ISO 14001, and ISO 45001 standards, fully demonstrating the company's firm commitment to innovation, efficiency, sustainable development, and meeting the stringent requirements of the industry.