Industry news--Karmin Electronic (HK) Limited

Infineon and WMS strengthen cooperation to provide energy-saving and economical fast charging services for electric vehicles
2024-03-04

New CoolSiC from Infineon Technologies Inc. (FSE code: IFX/OTC QX code: IFNNY) ™ Hybrid discrete devices using TRENCHSTOP ™ 5 fast switching IGBT and CoolSiC Schottky diodes. China's leading manufacturer of power electronics and motor drivers for new energy vehicles, Shenzhen WMAX New Energy Co., Ltd. (VMAX), will use this device for its next generation 6.6 kW OBC/DCDC car charger. Infineon's components use D ² PAK packaging combines ultra-high speed TRENCHSTOP 5 IGBT with silicon carbide (SiC) Schottky barrier diodes, providing perfect cost-effectiveness in both hard switching and soft switching topologies. With excellent performance, optimized power density, and leading quality, this power semiconductor device is highly compatible with WMS's car charger.

CoolSiC ™ Hybrid discrete devices

Xu Jinzhu, Product Line Director and Chief Engineer of WMS R&D Department, said, "We are delighted to have chosen Infineon's CoolSiC Hybrid device for our next generation OBC, in order to achieve higher reliability, stability, performance, and power density. This deepens our cooperation with Infineon and promotes technological application innovation through close collaboration, jointly promoting the vigorous development of new energy vehicles."

"We are pleased to strengthen our cooperation with VMAX with efficient hybrid products. We will continue to drive the development of electric vehicles and meet industry requirements for performance, quality, and system costs with efficient solutions," said Robert Hermann, Vice President of Infineon Technologies' Automotive High Voltage Chip and Discrete Device Product Line

This hybrid discrete device is packaged with a fast hard switching TRENCHSTOP 5 650 V IGBT and a zero reverse recovery CoolSiC Schottky diode, resulting in extremely low switching losses when switching speeds exceed 50 kHz. This makes the device an excellent choice for high-power electric vehicle charging systems. In addition, the sturdy and durable 5th generation CoolSiC Schottky diode also has stronger surge current resistance, maximizing reliability. The diffusion soldering of this SiC diode improves the thermal resistance (Rth) of the package, making the chip size smaller and thus enhancing the power switching capability. With these features, the product has achieved better system reliability and service life, meeting the strict requirements of the automotive industry. In order to maximize compatibility with existing designs, the product also adopts the widely used D ² The pin to pin compatibility design of PAK packaging.

Supply situation

Using TRENCHSTOP ™ 5 Fast switch IGBT and CoolSiC ™ CoolSiC co packaged with Schottky diode G5 ™ Hybrid discrete devices are now available on the market. For more information, please visit www.Infineon. com/cms/en/product/power/igbt/coolsic hybrid devices/hybrid discrete/aikbe50n65rf5.

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