The innovative 1200V technology also demonstrates Transform's leading position in gallium nitride power conversion. The Vertical integration mode, its own epitaxial wafer production capacity, and patented process technology, combined with decades of engineering expertise, enable the company to bring the best performance GaN device combination to the market, and also has significant differentiation advantages in the following four aspects: manufacturability, easy drive, easy design, and reliability.
At the PCIM 2023 exhibition from May 9th to 11th, Transform also released information about 1200V devices.
Preliminary device specifications and how to obtain samples
The 1200V technology of Transform is based on proven processes and mature technology, meeting customers' reliability requirements. The GaN on Sapphire process is currently mass-produced in the LED market. In addition, the 1200V technology fully utilizes the high-performance, normally closed gallium nitride platform used in the current device combination of Transform.
The main specifications of TP120H070WS device include:
Internal resistance value 70 milliohms
Normally closed type
Efficient bidirectional conduction
Maximum ± 20V gate voltage
4-volt gate drive low disturbance
Zero QRR reverse recovery charge
3-pin TO-247 package
We suggest combining the Verilog-A device model with the SIMetrix Pro v8.5 circuit simulator. The LTSpice model is currently under development and will be released in the fourth quarter of 2023. Simulation modeling helps to achieve rapid and efficient power system design verification, while also reducing design iterations, development time, and hardware investment.
The 1200 volt power transistor sample is expected to be launched in the first quarter of 2024.
Application of Transform Gallium Nitride Power Devices in Automotive Power Systems and Charging Ecosystems
1200V gallium nitride devices are not only an ideal solution for various market applications, but also provide unique advantages for automotive systems.
The electric vehicle industry, especially at the higher kilowatt nodes of large vehicles, will develop towards 800V batteries in the second half of this decade. Therefore, the 1200 volt power conversion switch will be used to provide the required performance level. Therefore, Transpharm's 1200 volt platform will definitely play a major role in the field of new generation vehicle charger, DC-DC converter, drive inverter and Charging station system.
For electric vehicles currently using 400V batteries, the Transformer can provide a 650V normally closed SuperGaN ® Power tube solution. These power devices comply with the AEC-Q101 standard and can withstand high temperatures of 175 ° C, and have been mass-produced.
Umesh Mishra, Chief Technology Officer and Co Founder of Transform, stated: We are a leading power semiconductor company that showcases and fulfills GaN's promise. Transform's expertise brings high-performance gallium nitride devices to the market, constantly setting new standards in power density, performance, and system costs. Our 1200V technology demonstrates the innovative vision and determination of Transform's engineering team. We are proving that gallium nitride can easily replace previously specified silicon carbide applications Play a role in the market. For our business and gallium nitride technology, it has opened up a wide range of market application potential
About Transformer
Transform, Inc. is a global leader in the gallium nitride revolution, dedicated to designing, manufacturing, and selling high-performance, highly reliable gallium nitride semiconductor power devices for high-voltage power conversion applications. Transform has one of the largest power gallium nitride intellectual property portfolio, holding or obtaining over 1000 patents, and is the industry leader in producing high-voltage gallium nitride semiconductor devices certified by JEDEC and AEC-Q101. Thanks to the Vertical integration business model, the company can innovate at every stage of product and technology development: design, manufacturing, device and application support. The innovation of Transformer has enabled power electronic devices to break through the limitations of silicon, achieving efficiency exceeding 99%, increasing power density by 40%, and reducing system costs by 20%. The headquarters of Transform is located in Golita, California, and there are manufacturing factories in Golita and Keizu, Japan.
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