Diodes launches industrial grade silicon carbide MOSFETs with higher power density
2023-04-17
Diodes Corporation (Nasdaq: DIOD) has launched the latest product in the silicon carbide (SiC) series: DMWS120H100SM4 N-channel silicon carbide MOSFET. This device can meet the needs of industrial motor drives, solar inverters, data center and telecommunications power supply, DC to DC converters, and electric vehicle (EV) battery chargers for higher efficiency and power density.
DMWS120H100SM4 operates at high voltage (1200V) and drain current (up to 37A) while maintaining low thermal conductivity (R θ JC=0.6 ° C/W), very suitable for applications operating in harsh environments. The RDS (ON) (typical value) of this MOSFET is very low, only 80m Ω (for 15V gate drive), which can minimize conduction loss and improve efficiency. The gate charge of this device is only 52nC, which can reduce switch loss and lower packaging temperature.
This product is the first silicon carbide MOSFET in the market to adopt TO247-4 packaging. Additional Kelvin sensing pins can be connected to the source of MOSFETs to optimize switching efficiency and achieve higher power density.
About Diodes Incorporated
Diodes Corporation (Nasdaq: DIOD) is a member company of the Standard&Poor's Small Cap 600 Index and Russell 3000 Index, providing high-quality semiconductor products to global companies in the automotive, industrial, computing, consumer electronics, and communication markets. We have a rich product portfolio to meet customer needs, including separation, simulation, logic and mixed signal products, as well as advanced packaging technology. We offer a wide range of special application solutions and solution oriented sales, combined with 32 global locations covering engineering, testing, manufacturing, and customer service, making us a high-quality supplier in a high-yield and high-growth market.
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