Product Code |
brand |
product name |
Specification |
package |
quantity |
DR127-100-R |
BUSSMANN |
Inductance |
SIND 10UH 12.5x12.5 6A04 20% SHLD RoHS |
N/A |
700 |
DLW21SN900SQ2L |
Murata |
Inductance |
SIND 90OHM 0805 CM 25% DLW ROHS |
805 |
2000 |
BRL3225T2R2M |
TAIYO YUDEN |
Inductance |
SIND 2U2 1210 1A85 20% RoHS |
1210 |
8000 |
BLM18EG101TN1D |
Murata |
Inductance |
SIND FER 100R 0603 2A BEAD ROHS |
603 |
12000 |
BLM15AG102SN1D |
Murata |
Inductance |
FERRITE BEAD 1 KOHM 0402 1LN |
402 |
80000 |
742792021 |
WURTH |
Inductance |
SIND 22R 0805 BEAD 6A 8MOHM ROHS |
805 |
4000 |
STS8C5H30L |
ST |
Field effect transistor |
Original genuine goods, real inventory, original p |
/ |
30050 |
IRF3205PBF |
IR |
Field effect transistor |
Irf3205pbf FET Infineon package original factory o |
TO220AB |
3000 |
2N7002.215 |
NEXPERIA |
Field effect transistor |
2n7002215 MOS (field effect transistor) SOT-23 (so |
TO-236AB |
36000 |
NX3008NBK.115 |
NXP |
Field effect transistor |
Dual FET, MOSFET, n-channel, 30 V, 400 Ma, 1 ohm, |
SC75 |
2000 |