Product
Product Code brand product name Specification package quantity
DR127-100-R BUSSMANN Inductance SIND 10UH 12.5x12.5 6A04 20% SHLD RoHS N/A 700
DLW21SN900SQ2L Murata Inductance SIND 90OHM 0805 CM 25% DLW ROHS 805 2000
BRL3225T2R2M TAIYO YUDEN Inductance SIND 2U2 1210 1A85 20% RoHS 1210 8000
BLM18EG101TN1D Murata Inductance SIND FER 100R 0603 2A BEAD ROHS 603 12000
BLM15AG102SN1D Murata Inductance FERRITE BEAD 1 KOHM 0402 1LN 402 80000
742792021 WURTH Inductance SIND 22R 0805 BEAD 6A 8MOHM ROHS 805 4000
STS8C5H30L ST Field effect transistor Original genuine goods, real inventory, original p / 30050
IRF3205PBF IR Field effect transistor Irf3205pbf FET Infineon package original factory o TO220AB 3000
2N7002.215 NEXPERIA Field effect transistor 2n7002215 MOS (field effect transistor) SOT-23 (so TO-236AB 36000
NX3008NBK.115 NXP Field effect transistor Dual FET, MOSFET, n-channel, 30 V, 400 Ma, 1 ohm, SC75 2000