Mitsubishi Electric began providing SiC-MOSFET module samples with integrated SBD
2023-05-22
3.3kV Integrated SBD SiC-MOSFET Module
In recent years, in order to reduce carbon emissions worldwide, power semiconductor devices are increasingly being used in efficient power conversion applications, especially in heavy industry. These devices are used in converter equipment, such as converter systems in track traction and DC transmission systems. Among them, SiC power semiconductors can significantly reduce power loss, and people have high expectations for them. In addition, for large-scale industrial equipment, in order to further improve its conversion efficiency, the demand for high-efficiency power semiconductor modules is constantly increasing.
To further contribute to the high power output, high efficiency, and high reliability of large-scale industrial converter equipment, Mitsubishi Electric has developed this SiC MOSFET module, which uses a built-in SBD SiC MOSFET chip and an optimized internal packaging structure to effectively reduce switch losses. Samples will be provided soon. At this point, Mitsubishi Electric's 3.3kV LV100 package includes a total of 4 SiC MOSFET modules and 2 Si IGBT modules.
Product Features
1. Integrated SiC-MOSFET with SBD to reduce power loss and improve converter output power, efficiency, and reliability
2. Adopting integrated SBD SiC MOSFETs and optimized packaging structure, compared with the company's existing silicon power modules, the switch loss is reduced by 91% * 4, and compared with the existing all SiC power modules, it is reduced by 66% * 5, thereby reducing the power loss of the converter and helping to improve output power and efficiency.
The integrated SiC MOSFET with SBD and optimized current capacity improve the reliability of the converter.
4. Optimized terminal layout, suitable for converters of different capacity sizes
5. The optimized terminal layout is conducive to parallel connection, achieving flexible power configuration of the converter through different numbers of parallel connections.
6. The packaging design of DC and AC main terminals arranged at both ends helps to simplify circuit design.
This product is a product that complies with item 2 (41) 3 of Schedule 1 of the Export Trade Control Order.
*1：Schottky Barrier Diode
*2: Silicon Carbide
*3：Metal-Oxide-Semiconductor Field-Effect Transistor
*4: 3.3kV/600A silicon power module (CM600DA-66X)
*5: 3.3kV/750A Full SiC Power Module (FMF750DC-66A)
About Mitsubishi Electric
Mitsubishi Electric was founded in 1921 and is a globally renowned comprehensive enterprise. Ranked 351st on the Fortune Global 500 in 2022. As of March 31, 2022, the group's revenue was 4476.8 billion yen (approximately USD 33.2 billion). As a technology leading enterprise, Mitsubishi Electric has multiple patented technologies and occupies an important position in global markets such as power equipment, communication equipment, industrial automation, electronic components, and home appliances with strong technical strength and good corporate reputation. Especially in the electronic component market, Mitsubishi Electric has been engaged in the development and production of semiconductors for over 60 years. Its semiconductor products have been widely used in fields such as variable frequency household appliances, track traction, industrial and new energy, electric vehicles, analog/digital communication, and wired/wireless communication.
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